18 citations · 38 across the 4 of their papers we have counts for
4 papers
STM investigation of structural properties of Si layers deposited on Si(001) vicinal surfaces
L. V. Arapkina, V. A. Chapnin, K. V. Chizh +2
This communication covers investigation of the structural properties of surfaces of Si epitaxial layers deposited on different Si(001) vicinal substrates. We have shown processes o…
Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by STM, RHEED and HRTEM
L. V. Arapkina, L. A. Krylova, K. V. Chizh +3
Structural properties of the clean Si(001) surface obtained as a result of low-temperature (470--650C) pre-growth annealings of silicon wafers in a molecular-beam epitaxy chamber h…
Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED
L. V. Arapkina, V. A. Yuryev, K. V. Chizh +3
Pre-growth preparation of the Si(001) clean surface is a key process for Ge/Si UHV MBE. It usually includes pre-cleaning by liquid etchants, thermal pretreatment in UHV and removal…
STM and RHEED study of the Si(001)-c(8x8) surface
Larisa V. Arapkina, Vladimir M. Shevlyuga, Vladimir A. Yuryev
The Si(001) surface deoxidized by short annealing at T~925C in the ultrahigh vacuum molecular beam epitaxy chamber has been in situ investigated by high resolution scanning tunnell…