100 citations · 154 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2012★ 54 cited
Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
Jiangjiang J. Gu, Heng Wu, Yiqun Liu +3
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport propertie…
cond-mat.mes-hall2011★ 100 cited
First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach
Jiangjiang Gu, Yiqun Liu, Yanqing Wu +3
The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN g…