18 citations · 41 across the 3 of their papers we have counts for
6 papers
Self-compensation in highly n-type InN
C. Rauch, F. Tuomisto, P. D. C. King +3
Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities.…
Defect evolution and interplay in n-type InN
Christian Rauch, Filip Tuomisto, Arantxa Vilalta-Clemente +5
The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6x10E20cm-3 are studied using positron an…
Effect of Native Defects on Optical Properties of InxGa1-xN Alloys
S. X. Li, E. E. Haller, K. M. Yu +6
The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift…
Internal transitions of negatively charged magneto-excitons and many body effects in a two-dimensional electron gas
H. A. Nickel, T. M. Yeo, A. B. Dzyubenko +5
Spin-singlet and spin-triplet internal transitions of quasi-two-dimensional, negatively charged magneto-excitons (X-) and their evolution with excess electron density have been stu…
Topological Phase Diagram of a Two-Subband Electron System
X. Y. Lee, H. W. Jiang, W. J. Schaff
We present a phase diagram for a two-dimensional electron system with two populated subbands. Using a gated GaAs/AlGaAs single quantum well, we have mapped out the phases of variou…
Termination of the spin-resolved integer quantum Hall effect
L. W. Wong, H. W. Jiang, E. Palm +1
We report a magnetotransport study of the termination of the spin-resolved integer quantum Hall effect by controlled disorder in a gated GaAs/AlGaAs heterostructure. We have found…