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cond-mat.mtrl-sci2008
InP-quantum dots in Al0.20Ga0.80InP with different barrier configurations
Wolfgang-Michael Schulz, Robert Rossbach, Matthias Reischle +3
Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al0.20Ga0.80InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of…
cond-mat.other2008
Polarization fine-structure and enhanced single-photon emission of self-assembled lateral InGaAs quantum dot molecules embedded in a planar micro-cavity
C. Hermannstädter, M. Witzany, G. J. Beirne +8
Single lateral InGaAs quantum dot molecules have been embedded in a planar micro-cavity in order to increase the luminescence extraction efficiency. Using a combination of metal-or…