22 citations · 47 across the 7 of their papers we have counts for
7 papers
Gold assisted molecular beam epitaxy of Ge nanostructures on Ge(100) Surface
A. Rath, J. K. Dash, R. R. Juluri +2
We report on the gold assisted epitaxial growth of Ge nanostructures under ultra high vacuum (UHV) conditions (\approx3\times 10-10 mbar) on clean Ge (100) surfaces. For this study…
Shape evolution of MBE grown SiGe structures on high index Si(5 5 12) surfaces: A temperature dependent study
J. K. Dash, A. Rath, R. R. Juluri +1
The morphological evolution and the effect of growth temperature on size, orientation and composition of molecular beam epitaxy grown Ge-Si islands on Si(5 5 12) surfaces have been…
Structural modification in Au/Si(100) system: Role of surface oxide and vacuum level
A. Rath, J. K Dash, R. R. Juluri +1
To understand surface structural modifications for Au/Si (100) system, a thin gold film of ~2.0 nm was deposited under ultra high vacuum (UHV) condition on reconstructed Si surface…
Universality in Shape Evolution of SiGe Structures on High Index Silicon Surfaces
J. K. Dash, T. Bagarti, A. Rath +2
The MBE grown SiGe islands on reconstructed high index surfaces, such as, Si(5 5 12), Si(5 5 7) and Si(5 5 3) show a universality in the shape evaluation and the growth…
Growth of Oriented Au Nanostructures: Role of Oxide at the Interface
Ashutosh Rath, J. K. Dash, R. R. Juluri +3
We report on the formation of oriented gold nano structures on Si(100) substrate by annealing procedures in low vacuum (\approx10-2 mbar) and at high temperature (\approx 975^{\cir…
Temperature-dependent electron microscopy study of Au thin films on Si (100) with and without native oxide layer as barrier at the interface
Ashutosh Rath, J. K. Dash, R. R. Juluri +2
Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported.…