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cond-mat.mtrl-sci2026
Twist-induced Out-of-plane Ferroelectricity in Bilayer Hafnia
Jian Huang, Gwan Yeong Jung, Pravan Omprakash +6
Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the po…
cond-mat.mtrl-sci2025
Quasiparticle energies and excitonic effects of α-RuCl3
Du Li, Li Yang
α-phase Ruthenium (III) chloride (α-RuCl3) has attracted significant attention because of its potential for realizing Kitaev quantum spin liquid. In this work, we employ first-pr…