5 papers
A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene
J. Hicks, A. Tejeda, A. Taleb-Ibrahimi +10
A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either st…
Silicon intercalation into the graphene-SiC interface
F. Wang, K. Shepperd, J. Hicks +11
In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room tem…
Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment
J. Hicks, M. Sprinkle, K. Shepperd +8
Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by int…
Structure and electronic properties of epitaxial graphene grown on SiC
M. Sprinkle, J. Hicks, A. Tejeda +11
We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the unders…
First direct observation of a nearly ideal graphene band structure
M. Sprinkle, D. Siegel, Y. Hu +10
Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of e…