most citedElectrical Breakdown in a V2O3 device at the Insulator to Metal Transition

58 citations · 58 across the 1 of their papers we have counts for

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cond-mat.mtrl-sci2012★ 58 cited

Electrical Breakdown in a V2O3 device at the Insulator to Metal Transition

S. Guénon, S. Scharinger, Siming Wang +4

We have measured the electrical properties of a V2O3 thin film micro bridge at the insulator metal transition (IMT). Discontinuous jumps to lower voltages in the current voltage ch…