Self Consistent Simulation of C-V Characterization and Ballistic Performance of Double Gate SOI Flexible-FET Incorporating QM Effects

Zubair Al Azim, Nadim Chowdhury, Iftikhar Ahmad Niaz +3

Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained b…