10 citations · 18 across the 4 of their papers we have counts for
4 papers
Topological surface states of strained Mercury-Telluride probed by ARPES
Olivier Crauste, Yoshiyuki Ohtsubo, Philippe Ballet +6
The topological surface states of strained HgTe have been measured using high-resolution ARPES measurements. The dispersion of surface states form a Dirac cone, which origin is clo…
Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks
Renaud Puybaret, John Hankinson, James Palmer +5
Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbid…
Epitaxial graphene morphologies probed by weak (anti)-localization
Ather Mahmood, Cécile Naud, Clément Bouvier +6
We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities…
Strained HgTe: a textbook 3D topological insulator
Clément Bouvier, Tristan Meunier, Philippe Ballet +3
Topological insulators can be seen as band-insulators with a conducting surface. The surface carriers are Dirac particles with an energy which increases linearly with momentum. Thi…