3 papers
cond-mat.mes-hall2013
Effects of interface electric field on the magnetoresistance in spin device
T. Tanamoto, M. Ishikawa, T. Inokuchi +2
An extension of the standard spin diffusion theory is presented by introducing a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. T…
cond-mat.mes-hall2012
Effects of interface resistance asymmetry on local and non-local magnetoresistance structures
Tetsufumi Tanamoto, Hideyuki Sugiyama, Tomoaki Inokuchi +2
Spin injection and detection are very sensitive to the interface properties between ferromagnet and semiconductor. Because the interface properties such as a tunneling resistance c…
cond-mat.mes-hall2011
Scalability of spin FPGA: A Reconfigurable Architecture based on spin MOSFET
Tetsufumi Tanamoto, Hideyuki Sugiyama, Tomoaki Inokuchi +4
Scalability of Field Programmable Gate Array (FPGA) using spin MOSFET (spin FPGA) with magnetocurrent (MC) ratio in the range of 100% to 1000% is discussed for the first time. Area…