2 citations · 2 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2013★ 2 cited
Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots
M. F. Gonzalez-Zalba, J. Galibert, F. Iacovella +2
We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensi…
cond-mat.mes-hall2011
Detection of variable tunneling rates in silicon quantum dots
A. Rossi, T. Ferrus, W. Lin +3
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing…