4 citations · 4 across the 1 of their papers we have counts for
3 papers
cond-mat.mes-hall2013★ 4 cited
GHz photon-activated hopping between localized states in a silicon quantum dot
T. Ferrus, A. Rossi, A. Andreev +5
We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the…
cond-mat.mes-hall2011
Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots
T. Ferrus, A. Rossi, W. Lin +3
We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within…
cond-mat.mes-hall2011
Detection of variable tunneling rates in silicon quantum dots
A. Rossi, T. Ferrus, W. Lin +3
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing…