most citedMetal oxide resistive switching: evolution of the density of states across the metal-insulator transition

17 citations · 17 across the 1 of their papers we have counts for

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cond-mat.mes-hall2014★ 17 cited

Metal oxide resistive switching: evolution of the density of states across the metal-insulator transition

Alireza Mottaghizadeh, Qian Yu, Pei Lin Lang +2

We report the study of metal-STO-metal memristors where the doping concentration in STO can be fine-tuned through electric field migration of oxygen vacancies. In this tunnel junct…