activity
20092014
most citedRecord Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

155 citations · 186 across the 3 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2014★ 17 cited

Controlled epitaxial graphene growth within amorphous carbon corrals

James Palmer, Jan Kunc, Yike Hu +4

Structured growth of high quality graphene is necessary for technological development of carbon based electronics. Specifically, control of the bunching and placement of surface st…

cond-mat.mtrl-sci2013★ 14 cited

Wafer bonding solution to epitaxial graphene - silicon integration

Rui Dong, Zelei Guo, James Palmer +7

The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon,…

cond-mat.mtrl-sci2013★ 155 cited

Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

Zelei Guo, Rui Dong, Partha Sarathi Chakraborty +9

The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene…

cond-mat.mes-hall2012

Structured epitaxial graphene: growth and properties

Yike Hu, Ming Ruan, Zelei Guo +5

Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exc…

cond-mat.mes-hall2009

Möbius Graphene Strip as Topological Insulator

Z. L. Guo, Z. R. Gong, H. Dong +1

We study the electronic properties of Möbius graphene strip with a zigzag edge. We show that such graphene strip behaves as a topological insulator with a gapped bulk and a robust…