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researcher

M. V. S. Chandrashekhar

3 papers hereh-index 5155 citations10 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author1
  • last author1

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci3

identity via Semantic Scholar / OpenAlex

activity
20112014
most citedRevealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

86 citations · 86 across the 1 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2014★ 86 cited

Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

Camilla Coletti, Stiven Forti, Alessandro Principi +10

In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experi…

cond-mat.mtrl-sci2012

Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene using IR Reflection Spectroscopy

B. K. Daas, W. K. Nomani, K. M. Daniels +3

We investigate molecular adsorption doping by electron withdrawing NO2 and electron donating NH3 on epitaxial graphene grown on C-face SiC substrates. Amperometric measurements sho…

cond-mat.mtrl-sci2011

High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy

MVS Chandrashekhar, Iftekhar Chowdhury, P. Kaminski +3

Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiC weregrownsystematically, with resistivity \geq 109Ω-cmby maintaining high C/Si ratios 1.3-15 during gr…

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