29 citations · 31 across the 6 of their papers we have counts for
6 papers
Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current
Nadim Chowdhury, S. M. Farhaduzzaman Azad, Quazi D. M. Khosru
In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Nega…
A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect
Nadim Chowdhury, Imtiaz Ahmed, Zubair Al Azim +3
We propose a physically based analytical compact model to calculate Eigen energies and Wave functions which incorporates penetration effect. The model is applicable for a quantum w…
Self Consistent Simulation of C-V Characterization and Ballistic Performance of Double Gate SOI Flexible-FET Incorporating QM Effects
Zubair Al Azim, Nadim Chowdhury, Iftikhar Ahmad Niaz +3
Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained b…
Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects
Imtiaz Ahmed, Iftikhar Ahmad Niaz, Md. Hasibul Alam +3
We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Me…
A Physically Based Analytical Modeling of Threshold Voltage Control for Fully-Depleted SOI Double Gate NMOS-PMOS Flexible-FET
Nadim Chowdhury, Zubair Al Azim, Imtiaz Ahmed +3
In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold V…
In_xGa_{1-x}Sb MOSFET: Performance Analysis by Self Consistent CV Characterization and Direct Tunneling Gate Leakage Current
Md. Hasibul Alam, Iftikhar Ahmad Niaz, Imtiaz Ahmed +3
In this paper, Capacitance-Voltage (C-V) characteristics and direct tunneling (DT) gate leakage current of antimonide based surface channel MOSFET were investigated. Self-consisten…