14 citations · 35 across the 6 of their papers we have counts for
6 papers
Numerical guidelines for setting up a general purpose k.p simulator with applications to quantum dot heterostructures and topological insulators
Parijat Sengupta, Hoon Ryu, Sunhee Lee +2
The k.p perturbation method for determination of electronic structure first pioneered by Kohn and Luttinger continues to provide valuable insight to several band structure features…
Atomistic and continuum modeling of a zincblende quantum dot heterostructure
Parijat Sengupta, Sunhee Lee, Sebastian Steiger +2
A multiscale approach was adopted for the calculation of confined states in self-assembled semiconductor quantum dots (QDs). While results close to experimental data have been obta…
Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs
Abhijeet Paul, Giuseppe C. Tettamanzi, Sunhee Lee +5
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretica…
Thermionic Emission as a tool to study transport in undoped nFinFETs
Giuseppe C. Tettamanzi, Abhijeet Paul, Gabriel P. Lansbergen +6
Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the ch…
A Study of Temperature-dependent Properties of N-type delta-doped Si Band-structures in Equilibrium
Hoon Ryu, Sunhee Lee, Gerhard Klimeck
A highly phosphrous delta-doped Si device is modeled with a quantum well with periodic boundary conditions and the semi-empirical spds* tight-binding band model. Its temperature-de…
Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers
Sunhee Lee, Hoon Ryu, Zhengping Jiang +1
Semiconductor devices are scaled down to the level which constituent materials are no longer considered continuous. To account for atomistic randomness, surface effects and quantum…