13 citations · 22 across the 4 of their papers we have counts for
4 papers
Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001)
William A. O'Brien, Meng Qi, Lifan Yan +5
This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots…
Band Anticrossing in Dilute Germanium Carbides Using Hybrid Functionals
Chad A. Stephenson, William A. O'Brien, Meng Qi +3
Dilute germanium carbides (Ge1-xCx) offer a direct bandgap for compact silicon photonics, but widely varying results have been reported. This work uses ab initio simulations with H…
Ge Quantum Dots Encapsulated by AlAs Grown by Molecular Beam Epitaxy on GaAs Without Extended Defects
Meng Qi, Chad A. Stephenson, Vladimir Protasenko +4
We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were for…
Interband absorption in single layer hexagonal boron nitride
Aniruddha Konar, Raj Jana, Tian Fang +3
Monolayer of hexagonal boron nitride (h-BN), commonly known as "white graphene" is a promising wide bandgap semiconducting material for deep-ultaviolet optoelectronic devices. In t…