collaborators

1 paper

math.NA2014

3D Finite Element Modeling of Current Densities in Semiconductor Transport with Impact Ionization

Aurelio Mauri, Andrea Bortolossi, Giovanni Novielli +1

In this article we propose two novel 3D finite element models, denoted method A and B, for electron and hole Drift-Diffusion (DD) current densities. Method A is based on a primal-m…