14 citations · 25 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2008★ 11 cited
Evidence of valence band perturbations in GaAsN/GaAs(001): A combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation
S. Turcotte, S. Larouche, J. -N. Beaudry +4
The contribution of the fundamental gap E_ as well as those of the E_ + Delta(so) and E+ transitions to the dielectric function of GaAs1-xNx alloys near the band edge were determin…
cond-mat.mtrl-sci2004★ 14 cited
The origin of the E+ transition in GaAsN alloys
V. Timoshevskii, N. Madini, M. Cote +1
Optical properties of GaAsN system with nitrogen concentrations in the range of 0.9-3.7% are studied by full-potential LAPW method in a supercell approach. The E+ transition is ide…