48 citations · 66 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2015★ 18 cited
Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4
Cheng Wang, Heidi Seinige, Gang Cao +3
The electronic band gap in conventional semiconductor materials, such as silicon, is fixed by the material's crystal structure and chemical composition. The gap defines the materia…
cond-mat.mes-hall2014★ 48 cited
Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4
Cheng Wang, Heidi Seinige, Gang Cao +3
We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is us…