25 citations · 39 across the 4 of their papers we have counts for
4 papers
Transferable tight binding model for strained group IV and III-V heterostructures
Yaohua P. Tan, Michael Povolotskyi, Tillmann Kubis +2
In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding p…
Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots
Tarek Ameen, Hesameddin Ilatikhameneh, Yuling Hsueh +10
A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated elect…
Anisotropic strain in SmSe and SmTe: implications for electronic transport
Marcelo A. Kuroda, Zhengping Jiang, Michael Povolotskyi +3
Mixed valence rare-earth samarium compounds SmX (X=Se,Te) have been recently proposed as candidate materials for use in high-speed, low-power digital switches driven by stress indu…
Brillouin zone unfolding method for effective phonon spectra
Timothy B. Boykin, Arvind Ajoy, Hesameddin Ilatikhameneh +2
Thermal properties are of great interest in modern electronic devices and nanostructures. Calculating these properties is straightforward when the device is made from a pure materi…