23 citations · 34 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2015★ 11 cited
Defect and Temperature Dependence of Tunneling in InAs/GaSb Heterojunctions
Ryan M. Iutzi, Eugene A. Fitzgerald
Tunnel field effect transistors (TFETs) utilizing semiconductor heterojunctions have shown promise for low energy logic but presently do not display subthreshold swings steeper tha…
cond-mat.mes-hall2014★ 23 cited
Microstructure and Conductance-Slope of InAs/GaSb Tunnel Diodes
Ryan M. Iutzi, Eugene A. Fitzgerald
InAs/GaSb and similar materials systems have generated great interest as a heterojunction for tunnel field effect transistors (TFETs) due to favorable band alignment. However, litt…