8 papers
Investigation of GeSn aspect ratio trapping growth up to 8% Sn
Hryhorii Stanchu, Quang Minh Thai, Fernando M. de Oliveira +10
Aspect ratio trapping (ART) growth of germanium-tin (GeSn) is a promising approach to target important objectives on the quest towards commercialization of complementary metal-oxid…
Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection
Hryhorii Stanchu, Quang Minh Thai, Rajesh Kumar +16
As germanium-tin (GeSn) epitaxial growth quality continuously improves, the search for an efficient integration strategy of GeSn optoelectronics devices into complementary metal-ox…
Germanium-tin (GeSn) avalanche photodiode with up to 2.7 micro cutoff wavelength for extended SWIR detection
Quang Minh Thai, Rajesh Kumar, Justin Rudie +11
Separate absorption charge multiplication germanium tin on silicon avalanche photodiode offers a viable solution to achieve CMOS compatible, high sensitivity detection technology i…
Systematic study of high performance GeSn photodiodes with thick absorber for SWIR and extended SWIR detection
Quang Minh Thai, Rajesh Kumar, Abdulla Said Ali +13
Germanium-tin (GeSn) photodiodes potentiate a viable solution to integrate SWIR and extended SWIR detection technology into CMOS processing line. However, challenges in the growth…
Neutralizing Optical Defects in GeSn
Nirosh M. Eldose, Dinesh Baral, Diandian Zhang +7
Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to…
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Justin Rudie, Huong Tran, Yang Zhang +10
SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum w…