6 papers
Investigation of GeSn aspect ratio trapping growth up to 8% Sn
Hryhorii Stanchu, Quang Minh Thai, Fernando M. de Oliveira +10
Aspect ratio trapping (ART) growth of germanium-tin (GeSn) is a promising approach to target important objectives on the quest towards commercialization of complementary metal-oxid…
Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection
Hryhorii Stanchu, Quang Minh Thai, Rajesh Kumar +16
As germanium-tin (GeSn) epitaxial growth quality continuously improves, the search for an efficient integration strategy of GeSn optoelectronics devices into complementary metal-ox…
Germanium-tin (GeSn) avalanche photodiode with up to 2.7 micro cutoff wavelength for extended SWIR detection
Quang Minh Thai, Rajesh Kumar, Justin Rudie +11
Separate absorption charge multiplication germanium tin on silicon avalanche photodiode offers a viable solution to achieve CMOS compatible, high sensitivity detection technology i…
Atomic short-range order control of GeSn as a new degree of freedom for band engineering
Shang Liu, Yunfan Liang, Nirosh M. Eldose +18
Chemical short-range order (SRO) refers to preference or avoidance between neighboring atomic species, which significantly impacts the properties of advanced alloys. However, quant…
Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
Justin Rudie, Xiaoxin Wang, Rajesh Kumar +9
GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) struct…
Semiconductor-compatible topological digital alloys
Yunfan Liang, Damien West, Shunda Chen +3
Recently, GeSn alloys have attracted much interest for direct-gap infrared photonics and as potential topological materials which are compatible with the semiconductor industry. Ho…