Stephen Margiotta

collaborators

9 papers

cond-mat.mtrl-sci2026

Investigation of GeSn aspect ratio trapping growth up to 8% Sn

Hryhorii Stanchu, Quang Minh Thai, Fernando M. de Oliveira +10

Aspect ratio trapping (ART) growth of germanium-tin (GeSn) is a promising approach to target important objectives on the quest towards commercialization of complementary metal-oxid…

physics.app-ph2026

Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection

Hryhorii Stanchu, Quang Minh Thai, Rajesh Kumar +16

As germanium-tin (GeSn) epitaxial growth quality continuously improves, the search for an efficient integration strategy of GeSn optoelectronics devices into complementary metal-ox…

cond-mat.mtrl-sci2026

High-Mobility Ge-Doped $I^^{2}$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +5

In this work, high-quality Ge-doped (-201) $I^^{2}$ -Ga $_{2}$ O $_{3}$ thin films were heteroepitaxially grown on c-plane sapphire substrates with offcut angles of 0 deg, 2 deg, 6 deg, and 8…

cond-mat.mtrl-sci2026

High-Quality Ge-Doped (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +3

In this work, Ge-doped $I^^{2}$ -Ga $_{2}$ O $_{3}$ homoepitaxial films were grown on native (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ substrates using low-pressure chemical vapor deposition (LPCVD). Controlled…

physics.app-ph2026

Fast-Neutron Irradiation Effect in Heteroepitaxial $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +2

In this work, we investigate the response of Ni/ $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{1…

physics.app-ph2026

High-Purity Diamond Integration on $I^^{2}$ -Ga $_{2}$ O $_{3}$ via Microwave Plasma CVD for Enhanced Thermal Management

Saleh Ahmed Khan, Stephen Margiotta, Ahmed Ibreljic +1

The integration of diamond with $I^^{2}$ -Ga $_{2}$ O $_{3}$ presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal condu…

Investigation of GeSn aspect ratio trapping growth up to 8% Sn

Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection

High-Mobility Ge-Doped I^2-Ga2​O3​ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) I^2-Ga2​O3​ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Fast-Neutron Irradiation Effect in Heteroepitaxial I^2-Ga2​O3​ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

High-Purity Diamond Integration on I^2-Ga2​O3​ via Microwave Plasma CVD for Enhanced Thermal Management

High-Mobility Ge-Doped $I^^{2}$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Fast-Neutron Irradiation Effect in Heteroepitaxial $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

High-Purity Diamond Integration on $I^^{2}$ -Ga $_{2}$ O $_{3}$ via Microwave Plasma CVD for Enhanced Thermal Management