3 papers
cond-mat.mtrl-sci2026
Investigation of GeSn aspect ratio trapping growth up to 8% Sn
Hryhorii Stanchu, Quang Minh Thai, Fernando M. de Oliveira +10
Aspect ratio trapping (ART) growth of germanium-tin (GeSn) is a promising approach to target important objectives on the quest towards commercialization of complementary metal-oxid…
cond-mat.mtrl-sci2026
Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Aida Sheibani, Mohammad Zamani, Charles Paillard +9
Previous studies of the growth of two-dimensional (2D) gallium selenide (GaSe) by molecular beam epitaxy (MBE) on a gallium arsenide (GaAs) three-dimensional (3D) substrate have re…
physics.ins-det2026
Systematic study of high performance GeSn photodiodes with thick absorber for SWIR and extended SWIR detection
Quang Minh Thai, Rajesh Kumar, Abdulla Said Ali +13
Germanium-tin (GeSn) photodiodes potentiate a viable solution to integrate SWIR and extended SWIR detection technology into CMOS processing line. However, challenges in the growth…