4 papers · 1 filter
Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection
Hryhorii Stanchu, Quang Minh Thai, Rajesh Kumar +16
As germanium-tin (GeSn) epitaxial growth quality continuously improves, the search for an efficient integration strategy of GeSn optoelectronics devices into complementary metal-ox…
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Justin Rudie, Huong Tran, Yang Zhang +10
SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum w…
Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
Justin Rudie, Xiaoxin Wang, Rajesh Kumar +9
GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) struct…
Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Diandian Zhang, Nirosh M. Eldose, Dinesh Baral +9
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology,…