75 citations · 144 across the 5 of their papers we have counts for
6 papers
Layer-Transferred MoS2/GaN PN Diodes
Edwin W. Lee, Choong Hee Lee, Pran K. Paul +6
Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Dev…
Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1
Lu Ma, Digbijoy N. Nath, Edwin W. Lee +4
We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter lengt…
Growth and Electrical Characterization of 2D Layered MoS2/SiC Heterojunctions
Edwin W. Lee, Lu Ma, Digbijoy N. Nath +3
The growth and electrical characterization of a heterojunction formed between 2D layered p-MoS2 and nitrogen-doped 4H-SiC is reported. Direct growth of p-type MoS2 films on SiC was…
p-type doping in CVD grown MoS2 using Nb
M. Laskar, D. N. Nath, L. Ma +12
We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient…
Low frequency noise in chemical vapor deposited MoS2
Yuji Wang, Xinhang Luo, Ningjiao Zhang +5
Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanos…
Large Area Single Crystal (0001) Oriented MoS2 Thin Films
Masihhur R. Laskar, Lu Ma, ShanthaKumar K +6
Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and techno…