5 citations · 5 across the 2 of their papers we have counts for
2 papers
physics.optics2016
The relation between optical instabilities and absorbed material in photoluminescence with [0001] InGaN single quantum well
T. Tsutsumi, G. Alfieri, Y. Kawakami +1
In this letter, we aim to elucidate the physical mechanism of the so called optical memory effect and blinking phenomenon observed in InGaN single quantum wells (SQW). We have foun…
physics.optics2012★ 5 cited
Observation of lattice waves through observation of the photoluminescence Blinking in InGaN Quantum Well devices
R. Micheletto, K. Oikawa, C. Feldmeier
The photoluminescence of III-V wide band-gap semiconductors as InGaN is characterized by local intensity fluctuations, known as 'blinking points', that despite decades of research…