4 papers
Ultimate Limit of Biaxial Tensile Strain and N-Type Doping for Realizing an Efficient Low-Threshold Ge Laser
David S. Sukhdeo, Shashank Gupta, Krishna C. Saraswat +3
We theoretically investigate how the threshold of a Ge-on-Si laser can be minimized and how the slope efficiency can be maximized in presence of both biaxial tensile strain and n-t…
Impact of Minority Carrier Lifetime on the Performance of Strained Ge Light Sources
David S. Sukhdeo, Krishna C. Saraswat, Birendra +2
We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources, specifically LEDs and lasers. For Ge LEDs, we sho…
Anomalous Threshold Reduction from <100> Uniaxial Strain for a Low-Threshold Ge Laser
David S. Sukhdeo, Shashank Gupta, Krishna C. Saraswat +2
We theoretically investigate the effect of <100> uniaxial strain on a Ge-on-Si laser using deformation potentials. We predict a sudden and dramatic ~200x threshold reduction upon a…
Theoretical Modeling for the Interaction of Tin alloying with N-Type Doping and Tensile Strain for GeSn Lasers
David S. Sukhdeo, Krishna C. Saraswat, Birendra +2
We investigate the interaction of tin alloying with tensile strain and n-type doping for improving the performance of a Ge-based laser for on-chip optical interconnects. Using a mo…