1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2015
Reducing parasitic capacitance of strained Si nano p-MOSFET by control of virtual substrate doping
Mohammad Mahdi Khatami, Majid Shalchian, Mohammadreza Kolahdouz
Biaxially strained Si channel p-MOSFETs on virtual SiGe substrates suffer from a parasitic parallel channel in virtual substrate. This channel participates in current passing throu…
cond-mat.mtrl-sci2011★ 1 cited
Characterization and Predictive Modeling of Epitaxial Silicon-Germanium Thermistor Layers
B. Gunnar Malm, Mohammadreza Kolahdouz, Fredrik Forsberg +1
The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusio…