Reducing parasitic capacitance of strained Si nano p-MOSFET by control of virtual substrate doping

Mohammad Mahdi Khatami, Majid Shalchian, Mohammadreza Kolahdouz

Biaxially strained Si channel p-MOSFETs on virtual SiGe substrates suffer from a parasitic parallel channel in virtual substrate. This channel participates in current passing throu…