most citedIn-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

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cs.ET2015★ 6 cited

In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

B. L. Ji, H. Li, Q. Ye +15

Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characteri…