6 citations · 6 across the 1 of their papers we have counts for
2 papers
cs.ET2015★ 6 cited
In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory
B. L. Ji, H. Li, Q. Ye +15
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characteri…
cond-mat.mes-hall2010
Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs
Shweta Deora, Abhijeet Paul, R. Bijesh +5
In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si cha…