7 citations · 8 across the 2 of their papers we have counts for
2 papers
cond-mat.str-el2015★ 1 cited
Ambipolar High Mobility Hexagonal Transistors on Hydrogen-Terminated Silicon (111) Surfaces
Binhui Hu, Mohamad M. Yazdanpanah, Joyce E. Coppock +1
We have fabricated ambipolar transistors on chemically prepared hydrogen-terminated Si(111) surfaces, in which a two-dimensional electron system (2DES) or a two-dimensional hole sy…
cond-mat.mes-hall2015★ 7 cited
Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor
Binhui Hu, M. M. Yazdanpanah, B. E. Kane +2
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same…