most citedUsing atom probe tomography to understand Schottky barrier height pinning at the ZnO:Al / SiO2 / Si interface

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cond-mat.mtrl-sci2015★ 8 cited

Using atom probe tomography to understand Schottky barrier height pinning at the ZnO:Al / SiO2 / Si interface

R. Jaramillo, Amanda Youssef, Austin Akey +3

We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the…