most citedA physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

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cond-mat.mes-hall2015★ 41 cited

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

M. Musolino, D. van Treeck, A. Tahraoui +6

We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si s…