89 citations · 161 across the 3 of their papers we have counts for
4 papers
Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer
Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy +2
A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance…
Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs
Sanyam Bajaj, Omor F. Shoron, Pil Sung Park +7
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements…
Modeling of High Composition AlGaN Channel HEMTs with Large Threshold Voltage
Sanyam Bajaj, Ting-Hsiang Hung, Fatih Akyol +2
We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed…
Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride
Michele Esposto, Sriram Krishnamoorthy, Digbijoy N. Nath +3
We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interfac…