most citedChemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms

121 citations · 198 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall201522 cited

Probing Dirac Fermion Dynamics in Topological Insulator BiSe Films with Scanning Tunneling Microscope

Can-Li Song, Lili Wang, Ke He +4

Scanning tunneling microscopy and spectroscopy have been used to investigate the femtosecond dynamics of Dirac fermions in the topological insulator BiSe ultrathin films. A…

cond-mat.mtrl-sci201547 cited

Disentangling the magnetoelectric and thermoelectric transport in topological insulator thin films

Jinsong Zhang, Xiao Feng, Yong Xu +14

We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coeffi…

cond-mat.mtrl-sci201519 cited

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

Cui-Zu Chang, Zuocheng Zhang, Kang Li +11

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to sim…

cond-mat.mtrl-sci2014121 cited

Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms

Cui-Zu Chang, Peizhe Tang, Yi-Lin Wang +11

With angle-resolved photoemission spectroscopy, gap-opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topolo…

cond-mat.mtrl-sci201458 cited

Electrically tuned magnetic order and magnetoresistance in a topological insulator

Zuocheng Zhang, Xiao Feng, Minghua Guo +10

The Dirac-like surface states of the topological insulators (TIs) are protected by time reversal symmetry (TRS) and exhibit a host of novel properties. Introducing magnetism into T…