14 citations · 14 across the 4 of their papers we have counts for
4 papers
Exact location of dopants below the Si(001):H surface from scanning tunnelling microscopy and density functional theory
Veronika Brazdova, David R. Bowler, Kitiphat Sinthiptharakoon +5
Control of dopants in silicon remains the most important approach to tailoring the properties of electronic materials for integrated circuits, with Group V impurities the most impo…
Hydrogen adsorption and diffusion around Si(001)/Si(110) corners in nanostructures
Richard Smith, Veronika Brazdova, David R. Bowler
While the diffusion of hydrogen on silicon surfaces has been relatively well characterised both experimentally and theoretically, the diffusion around corners between surfaces, as…
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy
Kitiphat Sinthiptharakoon, Steven R. Schofield, Philipp Studer +4
We study sub-surface arsenic dopants in a hydrogen terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant…
Half-filled orbital and unconventional geometry of a common dopant in Si(001)
K. Iwaya, D. R. Bowler, V. Brazdova +6
The determining factor of the bulk properties of doped Si is the column rather than the row in the periodic table from which the dopants are drawn. It is unknown whether the basic…