collaborators

1 paper

physics.optics2016

The relation between optical instabilities and absorbed material in photoluminescence with [0001] InGaN single quantum well

T. Tsutsumi, G. Alfieri, Y. Kawakami +1

In this letter, we aim to elucidate the physical mechanism of the so called optical memory effect and blinking phenomenon observed in InGaN single quantum wells (SQW). We have foun…