Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

Yuze Meng, Chongyi Ling, Run Xin +10

Here we repair the single-layer MoSe2 field-effect transistors by the EDTA processing, after which the devices' room-temperature carrier mobility increases from 0.1 to over 70cm2/V…