702 citations · 984 across the 4 of their papers we have counts for
4 papers
Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics
Yuze Meng, Chongyi Ling, Run Xin +10
Here we repair the single-layer MoSe2 field-effect transistors by the EDTA processing, after which the devices' room-temperature carrier mobility increases from 0.1 to over 70cm2/V…
Realization of Room-Temperature Phonon-limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening
Zhihao Yu, Zhun-Yong Ong, Yiming Pan +9
We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperatur…
High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics
Yang Cui, Run Xin, Zhihao Yu +13
The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a s…
Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
Zhihao Yu, Yiming Pan, Yuting Shen +12
Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport i…