most citedA Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities

11 citations · 11 across the 1 of their papers we have counts for

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cond-mat.mes-hall2016★ 11 cited

A Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities

Akira Satou, Gen Tamamushi, Kenta Sugawara +3

A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating…