54 citations · 107 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2016★ 54 cited
Ge doping of GaN beyond the Mott transition
A. Ajay, J. Schörmann, M. Jimenez-Rodriguez +9
We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K…
cond-mat.mes-hall2011★ 53 cited
Carrier Confinement in GaN/AlGaN Nanowire Heterostructures for 0 < x <= 1
F. Furtmayr, J. Teubert, P. Becker +7
The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations be…