4 papers
Disorder signatures emerging at millikelvin temperatures in Si/SiGe field-effect stacks
Lino Visser, Alberto Mistroni, Yuji Yamamoto +9
The performance and scalability of electron spin qubits based on gate-defined quantum-dots in undoped Si/SiGe field-effect stacks remain constrained by disorder originating from th…
Brittle-to-ductile transition and strain relaxation in SiGe linearly graded buffers
Riccardo Civiero, Elena Campagna, Afonso Cerdeira Oliveira +5
The strain-relaxation mechanism of a set of SiGe linearly graded buffers (LGBs), grown following different temperature profiles, has been investigated by means of d…
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…
Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
Christoph Wilflingseder, Johannes Aberl, Enrique Prado Navarette +11
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport…