most citedAsymmetry-induced resistive switching in Ag-AgS-Ag memristors enabling a simplified atomic-scale memory design

44 citations · 44 across the 1 of their papers we have counts for

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cond-mat.mes-hall2016★ 44 cited

Asymmetry-induced resistive switching in Ag-AgS-Ag memristors enabling a simplified atomic-scale memory design

A. Gubicza, D. Zs. Manrique, L. Pósa +4

Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity…