Disentangling surface and bulk transport in topological-insulator $p$-$n$ junctions

D. Backes, D. Huang, R. Mansell +7

By combining $n$-type $\mathrm{B}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_3$ and $p$-type $\mathrm{S}{\mathrm{b}}_2\mathrm{T}{\mathrm{e}}_3$ topological insulators, vertically stacked $p$-$n$ junctions can be formed, allowing to position the Ferm…