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Takeo Hoshi

1 paper here

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author position
  • first author1

Across the 1 of 1 paper where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci1
ORCID 0000-0002-2487-5245

identity via Semantic Scholar / OpenAlex

most citedLarge-scale electronic-structure theory and nanoscale defects formed in cleavage process of silicon

6 citations · 6 across the 1 of their papers we have counts for

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1 paper · 1 filter

cond-mat.mtrl-sci2005★ 6 cited

Large-scale electronic-structure theory and nanoscale defects formed in cleavage process of silicon

T. Hoshi, R. Takayama, Y. Iguchi +1

Several methods are constructed for large-scale electronic structure calculations. Test calculations are carried out with up to 10^7 atoms. As an application, cleavage process of s…

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